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Radiofrequency performance of hydrogenated diamond MOSFETs with alumina.
- Source :
- Applied Physics Letters; 2/11/2019, Vol. 114 Issue 6, pN.PAG-N.PAG, 5p, 1 Diagram, 2 Charts, 5 Graphs
- Publication Year :
- 2019
-
Abstract
- Hydrogenated diamond MOSFETs with self-oxidized alumina as a gate dielectric are fabricated. The diamond MOSFETs show a high maximum drain current density of 466 mA/mm at V<subscript>GS</subscript> = −6 V, a transconductance of 58 mS/mm, and an off-state breakdown voltage of −53 V. The maximum output power density reaches 745 mW/mm at 2 GHz continuous wave, which is the highest reported value for diamond transistors measured at 2 GHz. The output power value measured is lower than that estimated. Pulse I-V analysis shows that the main factor that affects the output power of the diamond MOSFETs is the traps in the channel. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 114
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 134755163
- Full Text :
- https://doi.org/10.1063/1.5066052