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Epitaxial integration of high-mobility La-doped BaSnO3 thin films with silicon.

Authors :
Wang, Zhe
Paik, Hanjong
Chen, Zhen
Muller, David A.
Schlom, Darrell G.
Source :
APL Materials; Feb2019, Vol. 7 Issue 2, pN.PAG-N.PAG, 7p
Publication Year :
2019

Abstract

La-doped BaSnO<subscript>3</subscript> has been epitaxially integrated with (001) Si using an SrTiO<subscript>3</subscript> buffer layer via molecular-beam epitaxy (MBE). A 254 nm thick undoped BaSnO<subscript>3</subscript> buffer layer was grown to enhance the mobility of the overlying La-doped BaSnO<subscript>3</subscript> layer. The x-ray diffraction rocking curve of the BaSnO<subscript>3</subscript> 002 peak has a full width at half maximum of 0.02°. At room temperature, the resistivity of the La-doped BaSnO<subscript>3</subscript> film is 3.6 × 10<superscript>−4</superscript> Ω cm and the mobility is 128 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> at a carrier concentration of 1.4 × 10<superscript>20</superscript> cm<superscript>−3</superscript>. These values compare favorably to those of La-doped BaSnO<subscript>3</subscript> films grown by all techniques other than MBE on single-crystal oxide substrates. Our work opens an exciting arena for integrating hyper-functional oxide electronics that make use of high-mobility oxide films with the workhorse of the semiconductor industry, silicon. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2166532X
Volume :
7
Issue :
2
Database :
Complementary Index
Journal :
APL Materials
Publication Type :
Academic Journal
Accession number :
135019190
Full Text :
https://doi.org/10.1063/1.5054810