Semiconducting TiO2−xSx thin films by atomic layer deposition of TiS2 and its oxidation in ambient.

The authors describe the atomic layer deposition (ALD) of titanium oxysulfide films (TiO_2−xS_x). A new ALD chemistry of tetrakis(dimethylamido)titanium and hydrogen sulfide is proposed for fabricating amorphous titanium sulfide layers. They found that the resulting films subsequently underwent oxidation upon reactions under the ambient condition, resulting in TiO_2−xS_x. The resultant structures were analyzed by using x-ray diffraction, transmission electron microscopy, and x-ray photoelectron spectroscopy, indicative of the formation of TiO_2−xS_x. A combined study of Hall effect measurements and Mott–Schottky analysis showed n-type semiconductor behaviors possessing a good conductivity. Optical properties testify that the present system has a moderate bandgap in between the related binary end compounds such as TiS₂ and TiO₂. [ABSTRACT FROM AUTHOR]