Back to Search
Start Over
Effects of Ca2+ substitution on microstructure and microwave dielectric properties of low loss Ba(Mg1/3Nb2/3)O3 perovskite ceramics.
- Source :
- Journal of Materials Science: Materials in Electronics; Mar2019, Vol. 30 Issue 6, p5726-5732, 7p
- Publication Year :
- 2019
-
Abstract
- Ba<subscript>1−x</subscript>Ca<subscript>x</subscript>(Mg<subscript>1/3</subscript>Nb<subscript>2/3</subscript>)O<subscript>3</subscript> (0 ≤ x ≤ 0.02) perovskite ceramics were prepared by the solid-state reaction method. The phase composition and microstructure were characterized by XRD and SEM, respectively. The result showed that all ceramics exhibited the 1:2 ordered perovskite structure, and the grain size decreased first and then increased with different substitution amount of Ca<superscript>2+</superscript> for Ba<superscript>2+</superscript>. The dielectric properties were examined by Vector network analyzer, and the Raman spectra was used to interpret the dielectric properties of Ba<subscript>1−x</subscript>Ca<subscript>x</subscript>(Mg<subscript>1/3</subscript>Nb<subscript>2/3</subscript>)O<subscript>3</subscript> ceramics. The dielectric constant (ε<subscript>r</subscript>) were strongly depended on the Raman shift of A<subscript>1g</subscript>(O) stretch mode, and the quality factor (Q × f) manifested great correlated with the full width at half maxima (FWHM) of A<subscript>1g</subscript>(O) stretch mode. The Ba<subscript>1−x</subscript>Ca<subscript>x</subscript>(Mg<subscript>1/3</subscript>Nb<subscript>2/3</subscript>)O<subscript>3</subscript> ceramics substituted of Ca<superscript>2+</superscript> for Ba<superscript>2+</superscript> in x = 0.005, which possessed the narrowest FWHM and the highest degree of 1:2 ordering, showed the best microwave dielectric properties: ε<subscript>r</subscript> = 31.64, Q × f = 74421 GHz, τ<subscript>f</subscript> = 14.59 ppm/°C. [ABSTRACT FROM AUTHOR]
- Subjects :
- MICROSTRUCTURE
MICROWAVES
PEROVSKITE
MAGNESIUM
NIOBIUM
Subjects
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 30
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 135478246
- Full Text :
- https://doi.org/10.1007/s10854-019-00866-4