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An Evolvable Organic Electrochemical Transistor for Neuromorphic Applications.
- Source :
- Advanced Science; 4/3/2019, Vol. 6 Issue 7, pN.PAG-N.PAG, 1p
- Publication Year :
- 2019
-
Abstract
- An evolvable organic electrochemical transistor (OECT), operating in the hybrid accumulation–depletion mode is reported, which exhibits short‐term and long‐term memory functionalities. The transistor channel, formed by an electropolymerized conducting polymer, can be formed, modulated, and obliterated in situ and under operation. Enduring changes in channel conductance, analogous to long‐term potentiation and depression, are attained by electropolymerization and electrochemical overoxidation of the channel material, respectively. Transient changes in channel conductance, analogous to short‐term potentiation and depression, are accomplished by inducing nonequilibrium doping states within the transistor channel. By manipulating the input signal, the strength of the transistor response to a given stimulus can be modulated within a range that spans several orders of magnitude, producing behavior that is directly comparable to short‐ and long‐term neuroplasticity. The evolvable transistor is further incorporated into a simple circuit that mimics classical conditioning. It is forecasted that OECTs that can be physically and electronically modulated under operation will bring about a new paradigm of machine learning based on evolvable organic electronics. A transistor that evolves through use is presented as a synaptic mimic. By manipulating the input signal, it is possible to influence the strength of the transistor response to a given stimulus by orders of magnitude under operation, thereby inducing behavior that is analogous to short‐ and long‐term potentiation and depression in the brain. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 21983844
- Volume :
- 6
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Advanced Science
- Publication Type :
- Academic Journal
- Accession number :
- 135709834
- Full Text :
- https://doi.org/10.1002/advs.201801339