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Slingshot Pull-In Operation for Low-Voltage Nanoelectromechanical Memory Switches.
- Source :
- IEEE Transactions on Electron Devices; Apr2019, Vol. 66 Issue 4, p2040-2043, 4p
- Publication Year :
- 2019
-
Abstract
- A novel “slingshot” pull-in operation is proposed to lower the operation voltage (${V}_{\text {DD}}$) of nanoelectromechanical (NEM) memory switches for the implementation of monolithic 3-D (M3D) CMOS-NEM hybrid reconfigurable logic (RL) circuits. According to the theoretical calculation and experimental data, the proposed “slingshot” pull-in operation lowers ${V}_{\text {DD}}$ of the NEM memory switches by ~0.84 times. It contributes to the overall ${V}_{\text {DD}}$ reduction and chip density boost of M3D CMOS-NEM RL circuits. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 136509834
- Full Text :
- https://doi.org/10.1109/TED.2019.2899888