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A Sensitivity Map-Based Approach to Profile Defects in MIM Capacitors From ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ Measurements.
- Source :
- IEEE Transactions on Electron Devices; Apr2019, Vol. 66 Issue 4, p1892-1898, 7p
- Publication Year :
- 2019
-
Abstract
- We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (${J}$ – ${V}$), capacitance (${C}$ – ${V}$), and conductance (${G}$ – ${V}$) measurements. The technique relies on the concept of sensitivity maps (SMs) that identify the bandgap regions, where defects affect those electrical characteristics. The information provided by SMs are used to reproduce ${J}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ data measured at different temperatures and frequencies by means of physics-based simulations relying on an accurate description of carrier-defect interactions. The proposed defect spectroscopy technique is applied to ZrO2-based metal–insulator–metal structures of different compositions for dynamic random-access memory capacitor applications. The origin of the observed voltage, temperature, and frequency dependencies of the ${I}$ – ${V}$ , ${C}$ – ${V}$ , and ${G}$ – ${V}$ data is understood, and the atomic structure of the relevant stack defects is identified. [ABSTRACT FROM AUTHOR]
- Subjects :
- MIM capacitors
BAND gaps
COMPUTER simulation
ZIRCONIUM oxide
ATOMIC structure
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 136509840
- Full Text :
- https://doi.org/10.1109/TED.2019.2900030