Back to Search
Start Over
P‐193: Late‐News Poster: Low Temperature Solution Processed InZnO TFT Annealed in Wet Ambient.
- Source :
- SID Symposium Digest of Technical Papers; Jun2019, Vol. 50 Issue 1, p1333-1336, 4p
- Publication Year :
- 2019
-
Abstract
- In this work, we show that utilizing a low temperature wet annealing ambient can greatly improve the electrical characteristics of a solution processed oxide thin‐film transistor (TFT). Compared to atmospheric annealed devices (∼0.74 cm2/Vs), characteristics such as mobility can be 4 times higher for the wet annealed devices (∼2.99 cm2/Vs). [ABSTRACT FROM AUTHOR]
- Subjects :
- LOW temperatures
THIN film transistors
POSTERS
AMORPHOUS semiconductors
TRANSISTORS
Subjects
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 50
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 136710564
- Full Text :
- https://doi.org/10.1002/sdtp.13181