Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy.

MLA

Voitsekhovskii, A. V., et al. “Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe NBn Structure Grown by Molecular Beam Epitaxy.” Journal of Communications Technology & Electronics, vol. 64, no. 3, Mar. 2019, pp. 289–93. EBSCOhost, https://doi.org/10.1134/S1064226919030197.

APA

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., & Yakushev, M. V. (2019). Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy. Journal of Communications Technology & Electronics, 64(3), 289–293. https://doi.org/10.1134/S1064226919030197

Chicago

Voitsekhovskii, A. V., S. N. Nesmelov, S. M. Dzyadukh, S. A. Dvoretsky, N. N. Mikhailov, G. Yu. Sidorov, and M. V. Yakushev. 2019. “Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe NBn Structure Grown by Molecular Beam Epitaxy.” Journal of Communications Technology & Electronics 64 (3): 289–93. doi:10.1134/S1064226919030197.