Highly reliable low-temperature (180 °C) solution-processed passivation for amorphous In–Zn–O thin-film transistors.

This paper presents a low-temperature solution-processed passivation material based on polysilsesquioxane (PSQ) which greatly improves electrical performance and stability of solution-processed amorphous InZnO (a-IZO) thin-film transistors (TFTs). PSQ-passivated TFTs exhibited maximum mobilities of 6.02 cm² V⁻¹ s⁻¹ with the smallest threshold voltage shift of 2.8 V after positive bias stress test. We showed that hydrogen-related ions from PSQ passivation help passivate oxygen vacancies, thus improving the percolation path in a-IZO channel. Moreover, PSQ-passivated TFTs showed minimal change after being subjected to humidity stress. These results demonstrate the ability of low-temperature PSQ passivation as an effective barrier against atmospheric effects. [ABSTRACT FROM AUTHOR]