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Linear magnetoresistance in the low-field limit in density-wave materials.

Authors :
Yejun Feng
Yishu Wang
Silevitch, D. M.
Yan, J.-Q.
Kobayashi, Riki
Masato Hedo
Takao Nakama
Yoshichika Ōnuki
Suslov, A. V.
Mihaila, B.
Littlewood, P. B.
Rosenbaum, T. F.
Source :
Proceedings of the National Academy of Sciences of the United States of America; 6/4/2019, Vol. 116 Issue 23, p11201-11206, 6p
Publication Year :
2019

Abstract

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects, unusual topological band structures, and inhomogeneities that lead to wandering current paths can induce a cross-over from quadratic to linear MR with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear MR. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semiclassical narrative for a broad category of materials with partially gapped Fermi surfaces due to density waves. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00278424
Volume :
116
Issue :
23
Database :
Complementary Index
Journal :
Proceedings of the National Academy of Sciences of the United States of America
Publication Type :
Academic Journal
Accession number :
136851585
Full Text :
https://doi.org/10.1073/pnas.1820092116