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Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM.
- Source :
- IEEE Transactions on Nuclear Science; Jun2019, Vol. 66 Issue 6, p892-898, 7p
- Publication Year :
- 2019
-
Abstract
- We investigated the total ionizing dose (TID) influence on the single-event multiple-cell upsets (MCUs) in 65-nm 6-T static random-access memory and found that MCU sensitivity of the device is enhanced by TID. MCU caused by particle strike in pMOSFET (p-hits) or nMOSFET (n-hits) is distinguished by the MCU pattern. Analysis of MCU pattern shows that both p-hits MCU and n-hits MCU are enhanced by TID, and they have different mechanisms. Enhancement of n-hits MCU is due to the positive threshold voltage shift ($\Delta V$ th) of the pull-up pMOSFET, while p-hits MCU is strengthened by the increase in the equivalent resistance of p-well contacts caused by oxide-trapped charges (Not) trapped in the shallow trench isolation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 66
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 137099127
- Full Text :
- https://doi.org/10.1109/TNS.2018.2875451