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Pattern Formation With Locally Active S-Type NbOx Memristors.
- Source :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers; Jul2019, Vol. 66 Issue 7, p2627-2638, 12p
- Publication Year :
- 2019
-
Abstract
- The main focus of this paper is the evolution of complex behavior in a system of coupled nonlinear memristor circuits depending on the applied coupling conditions. Thereby, the parameter space for the local activity and the edge-of-chaos domain will be determined to enable the emergence of the pattern formation in locally coupled cells according to Chua’s principle. Each cell includes a Niobium oxide-based memristor, which may feature a locally active behavior once it is suitably biased on the negative differential resistance region of its DC current-voltage characteristic. It will be shown that there exists a domain of parameters under which each uncoupled cell may become locally active around a stable bias state. More specifically, under these conditions, the coupled cells are on the edge-of-chaos, and can support the static and dynamic pattern formation. The emergence of such complex spatio-temporal behavior in homogeneous structures is a prerequisite for information processing. The theoretical results are confirmed by measurements as well as by the numerical simulations of the accurate device and circuit models. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 66
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 137116444
- Full Text :
- https://doi.org/10.1109/TCSI.2019.2894218