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A Novel High-Voltage Pseudo-p-LDMOS Device With Three Current Conductive Paths.
- Source :
- IEEE Transactions on Electron Devices; Jan2019, Vol. 66 Issue 1, p592-597, 6p
- Publication Year :
- 2019
-
Abstract
- A new concept high-voltage pseudo-p-channel lateral double-diffused MOS (p-LDMOS) with multiple current paths for conduction is proposed and investigated in this paper. The proposed power device consists of two hole current paths (p-channel MOS device) and one electron current path (n-channel MOS device). The gate of the n-channel device is automatically controlled by an induced signal inside the chip, thus the proposed device can be considered as a p-LDMOS with more than 66.2% reduction of specific on-resistance in comparison with the conventional p-LDMOS device. Furthermore, the proposed device has a much better safe operation area, since the compensation of the electric flux density brought by electron and hole currents. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137215185
- Full Text :
- https://doi.org/10.1109/TED.2018.2882016