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Silicon Photonic IQ Modulators for 400 Gb/s and Beyond.

Authors :
Sepehrian, Hassan
Lin, Jiachuan
Rusch, Leslie Ann
Shi, Wei
Source :
Journal of Lightwave Technology; 7/1/2019, Vol. 37 Issue 13, p3078-3086, 9p
Publication Year :
2019

Abstract

Silicon photonics has enormous potential for ultrahigh-capacity coherent optical transceivers. We demonstrate an in-phase and quadrature (IQ) modulator using silicon photonic traveling-wave modulators optimized for higher order quadrature amplitude modulation (QAM). Its optical and RF characteristics are studied thoroughly in simulation and experiment. We propose a system-orientated approach to optimization of the silicon photonic IQ modulator, which minimizes modulator-induced power penalty in a QAM transmission link. We examine the tradeoff between modulation efficiency and bandwidth for the optimal combination of modulator length and bias voltage to maximize the clear distance between adjacent constellation points. This optimum depends on baud rate and modulation format, as well as achievable driving voltage swing. Measured results confirm our prediction using the proposed methodology. Without precompensating bandwidth limitation of the modulator, net data rates up to 232 Gb/s (70 Gbaud 16-QAM) on single polarization are captured, indicating great potential for 400+ Gb/s dual-polarization transmission. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
07338724
Volume :
37
Issue :
13
Database :
Complementary Index
Journal :
Journal of Lightwave Technology
Publication Type :
Academic Journal
Accession number :
137233031
Full Text :
https://doi.org/10.1109/JLT.2019.2910491