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Relevance of Device Cross Section to Overcome Boltzmann Switching Limit in 3-D Junctionless Transistor.
- Source :
- IEEE Transactions on Electron Devices; Jun2019, Vol. 66 Issue 6, p2704-2709, 6p
- Publication Year :
- 2019
-
Abstract
- In this paper, the requirements of device cross section and aspect ratio (AR) are examined to facilitate steep switching in heavily doped 3-D multiple gate junctionless (JL) transistors. It is shown through well-calibrated simulations and physical insights that the sharp OFF-to- ON switching action is predominantly governed by the area of cross section (${A} _{\textsf {cross}}$) instead of the gate length. A 3-D JL architecture preferably oriented toward a planar topology, i.e., with wider fin and low AR, is conducive for steep switching as a greater bulk area is available for impact ionization. On the contrary, narrow vertical architectures with AR > 1 suppress ${A} _{\textsf {cross}}$ in the bulk and are less likely to support the steep current transition. Steep switching specific scaling methodology is showcased to attain a sharp increase in drain current with a sub-60 mV/decade swing in a tri-gate JL transistor along with an associated negative value of total gate capacitance. [ABSTRACT FROM AUTHOR]
- Subjects :
- IMPACT ionization
TRANSISTORS
SWITCHING circuits
RELEVANCE
LOGIC circuits
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 6
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 137270854
- Full Text :
- https://doi.org/10.1109/TED.2019.2912209