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Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy.
- Source :
- Applied Physics Letters; 7/29/2019, Vol. 115 Issue 5, pN.PAG-N.PAG, 5p, 5 Graphs
- Publication Year :
- 2019
-
Abstract
- Transition metals, such as Fe, are commonly used in either layers or substrates to serve as deep intentional acceptors to realize semi-insulating substrates, regrowth interfaces, or buffer layers. The unintentional incorporation of the compensating acceptor in subsequent layers is a major concern in epitaxial growth. In this paper, we report on unintentional Fe incorporation for the homoepitaxial growth of (010) β-Ga<subscript>2</subscript>O<subscript>3</subscript> by plasma-assisted molecular beam epitaxy on (010) Fe-doped β-Ga<subscript>2</subscript>O<subscript>3</subscript> substrates. Fe was found to incorporate heavily into films grown at 500 °C, while growth temperatures of 650 °C and higher showed a significantly longer tail of Fe in the films. This Fe tail was determined to be a result of surface riding during growth rather than diffusion. The total surface riding concentration of Fe was found to be approximately 3 × 10<superscript>12</superscript> cm<superscript>−2</superscript> from a typical Fe-doped (010) β-Ga<subscript>2</subscript>O<subscript>3</subscript> substrate. Surface segregation coefficients of 0.982 and 0.993 were calculated for growth temperatures of 500 °C and 700 °C, respectively. Furthermore, growth temperatures of 500 °C–700 °C demonstrated high crystalline quality and smooth surface morphology. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 115
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 137893932
- Full Text :
- https://doi.org/10.1063/1.5096183