Back to Search
Start Over
Study on the nitridation of β-Ga2O3 films.
- Source :
- Chinese Physics B; Aug2019, Vol. 28 Issue 8, p1-1, 1p
- Publication Year :
- 2019
-
Abstract
- Single-crystal GaN layers have been obtained by nitriding β-Ga<subscript>2</subscript>O<subscript>3</subscript> films in NH<subscript>3</subscript> atmosphere. The effect of the temperature and time on the nitridation and conversion of Ga<subscript>2</subscript>O<subscript>3</subscript> films have been investigated. The nitridation process results in lots of holes in the surface of films. The higher nitridation temperature and longer time can promote the nitridation and improve the crystal quality of GaN films. The converted GaN porous films show the single-crystal structures and low-stress, which can be used as templates for the epitaxial growth of high-quality GaN. [ABSTRACT FROM AUTHOR]
- Subjects :
- NITRIDATION
GALLIUM nitride films
TEMPERATURE effect
EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 28
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 138037063
- Full Text :
- https://doi.org/10.1088/1674-1056/28/8/088103