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Superconductivity in Topological Semimetal θ-TaN at High Pressure*.

Authors :
Ya-Ting Jia
Jian-Fa Zhao
Si-Jia Zhang
Shuang Yu
Guang-Yang Dai
Wen-Min Li
Lei Duan
Guo-Qiang Zhao
Xian-Cheng Wang
Xu Zheng
Qing-Qing Liu
You-Wen Long
Zhi Li
Xiao-Dong Li
Hong-Ming Weng
Run-Ze Yu
Ri-Cheng Yu
Chang-Qing Jin
Source :
Chinese Physics Letters; Aug2019, Vol. 36 Issue 8, p1-1, 1p
Publication Year :
2019

Abstract

Recently, θ-TaN was proposed to be a topological semimetal with a new type of triply degenerate nodal points. Here, we report studies of pressure dependence of transport, Raman spectroscopy and synchrotron x-ray diffraction on θ-TaN up to 61 GPa. We find that θ-TaN becomes superconductive above 24.6 GPa with T<subscript>c</subscript>at 3.1 K. The θ-TaN is of n-type carrier nature with carrier density about 1.1 × 10<superscript>20</superscript>/cm<superscript>3</superscript>at 1.2 GPa and 20 K, while the carrier density increases with the pressure and saturates at about 40 GPa in the measured range. However, there is no crystal structure transition with pressure up to 39 GPa, suggesting the topological nature of the pressure induced superconductivity. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
0256307X
Volume :
36
Issue :
8
Database :
Complementary Index
Journal :
Chinese Physics Letters
Publication Type :
Academic Journal
Accession number :
138135921
Full Text :
https://doi.org/10.1088/0256-307X/36/8/087401