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Challenges to Partial Switching of Hf0.8Zr0.2O2 Gated Ferroelectric FET for Multilevel/Analog or Low-Voltage Memory Operation.
- Source :
- IEEE Electron Device Letters; Sep2019, Vol. 40 Issue 9, p1423-1426, 4p
- Publication Year :
- 2019
-
Abstract
- The ability to partially switch an FeFET could enable their use as an embedded low-voltage memory and as analog weight storage in artificial neural networks (ANNs). We report on memory characterization of FeFETs gated with 5.5-nm Hf0.8Zr0.2O2, fabricated on fully depleted silicon-on-insulator using a self-aligned, gate last process. We find that for a single device, excellent elevated temperature retention, program/erase endurance, and read endurance are obtained; however, there is significant device to device variability in the response of the ferroelectric to a partially switching program pulse, which may require the use of feedback in programming. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 40
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 138275959
- Full Text :
- https://doi.org/10.1109/LED.2019.2931430