Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching.

We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI₃) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI₃. Both the GAPbI₃- and MAPbI₃-based ReRAM devices showed bistable switching characteristics with a low operating voltage (<0.25 V) and high on/off ratio (∼10⁶). Remarkably, we found that the GAPbI₃-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI₃, only 4 days). The GAPbI₃ devices lasted for a larger number of cycles (>1900) in an endurance test and exhibited a longer data storage time (>3 × 10⁴ s) in a retention test. Our results suggest that GAPbI₃ has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices. [ABSTRACT FROM AUTHOR]