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A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs.
- Source :
- IEEE Transactions on Electron Devices; Aug2019, Vol. 66 Issue 8, p3286-3289, 4p
- Publication Year :
- 2019
-
Abstract
- This work investigates the effects of HfO2 layer defects, formed by the Al atoms in the metal gate, on performance and reliability in advanced n-type metal–oxide–semiconductor field-effect transistors (n-MOSFETs) with different Al content in the gate stacks. Many groups have proposed theories (e.g., Si–H bond dissociation, trapped in high- ${k}$ defects and impact ionization) to explain the degradation mechanisms in MOSFETs, with most focusing on the dissociation of the Si-H bond at the Si/SiO2 interface and the carrier trapping in the high- $k$ layer. However, for multi- ${V}_{{\text {th}}}$ devices, experimental results indicate that the formation of defects by Al atoms in the HfO2 layer is the main reason for degradation in advanced n-MOSFETs. Therefore, we propose a mechanism to clarify the deterioration in advanced n-MOSFETs with different Al content in the gate stacks, and this mechanism is confirmed by positive bias temperature instability (PBTI), hot carrier instability (HCI), HCI power-law fitting and the gate-induced drain leakage (GIDL) measurement. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 66
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 138462844
- Full Text :
- https://doi.org/10.1109/TED.2019.2925104