Stable ferroelectric properties of Hf0.5Zr0.5O2 thin films within a broad working temperature range.

The ferroelectric properties of 20 nm Hf_0.5Zr_0.5O₂ (HZO) thin films has been investigated in a wide temperature range from 100 K to 450 K. The remnant polarization of HZO thin films decreases slightly from 24.6 μC cm⁻² (100 K) to 17.9 μC cm⁻² (450 K), indicating a robust temperature stability. The capacitors also exhibit excellent endurance properties up to 10⁹ cycles at 100 K and 300 K, and their endurance cycles slightly degrades to 10⁸ at an elevated temperature of 450 K. The results show that HZO ferroelectric thin films have great potential for future emerging memory applications in various harsh temperature environments. [ABSTRACT FROM AUTHOR]