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Resonant Switching Cell Model for High-Frequency Single-Ended Resonant Converters.

Authors :
Lee, Kyung-Hwan
Ha, Jung-Ik
Source :
IEEE Transactions on Power Electronics; Dec2019, Vol. 34 Issue 12, p11897-11911, 15p
Publication Year :
2019

Abstract

This paper proposes a resonant switching cell model to analyze and design the single-ended resonant dc–dc converters. The single-ended zero-voltage switching (ZVS) converters such as the Class E converter are efficient for megahertz switching because they feature low turn-on and turn-off switching losses. Also, they use only a ground-referenced switch, allowing a simple gate drive circuit. In this paper, we investigate the single-ended resonant converter with the small input inductance, whereas the conventional Class E converter has a large input inductance. The main contribution of this paper is to propose the resonant switching cell as an analytic model that simplifies the analysis and the design of the resonant dc–dc converters. Furthermore, this paper presents the design method of the resonant switching cell model for minimizing the resonant current magnitude and conduction loss while the converter maintains ZVS property. The experimental results from a 10-MHz GaN-based prototype demonstrate the feasibility and effectiveness of the analysis and design based on the proposed resonant switching cell model. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
08858993
Volume :
34
Issue :
12
Database :
Complementary Index
Journal :
IEEE Transactions on Power Electronics
Publication Type :
Academic Journal
Accession number :
138593152
Full Text :
https://doi.org/10.1109/TPEL.2019.2906336