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Ferroelectric properties of BaTiO3 thin films co-doped with Mn and Nb.

Authors :
Phuyal, Dibya
Mukherjee, Soham
Jana, Somnath
Denoel, Fernand
Kamalakar, M. Venkata
Butorin, Sergei M.
Kalaboukhov, Alexei
Rensmo, Håkan
Karis, Olof
Source :
AIP Advances; Sep2019, Vol. 9 Issue 9, pN.PAG-N.PAG, 6p
Publication Year :
2019

Abstract

We report on properties of BaTiO<subscript>3</subscript> thin films where the bandgap is tuned via aliovalent doping of Mn and Nb ions co-doped at the Ti site. The doped films show single-phase tetragonal structure, growing epitaxially with a smooth interface to the substrate. Using piezoforce microscopy, we find that both doped and undoped films exhibit good ferroelectric response. The piezoelectric domain switching in the films was confirmed by measuring local hysteresis of the polarization at several different areas across the thin films, demonstrating a switchable ferroelectric state. The doping of the BaTiO<subscript>3</subscript> also reduces the bandgap of the material from 3.2 eV for BaTiO<subscript>3</subscript> to nearly 2.7 eV for the 7.5% doped sample, suggesting the viability of the films for effective light harvesting in the visible spectrum. The results demonstrate co-doping as an effective strategy for bandgap engineering and a guide for the realization of visible-light applications using its ferroelectric properties. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21583226
Volume :
9
Issue :
9
Database :
Complementary Index
Journal :
AIP Advances
Publication Type :
Academic Journal
Accession number :
138898622
Full Text :
https://doi.org/10.1063/1.5118869