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Formation of hBN monolayers through nitridation of epitaxial silicene on diboride thin films.
- Source :
- Journal of Applied Physics; 10/7/2019, Vol. 126 Issue 13, pN.PAG-N.PAG, 6p, 2 Diagrams, 3 Graphs
- Publication Year :
- 2019
-
Abstract
- The formation process of hexagonal boron nitride (hBN) monolayer sheets on single-crystalline ZrB<subscript>2</subscript>(0001) thin films grown on Si(111) wafers has been investigated by electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. A two-step reaction was identified, resulting first in the formation of a silicon nitride layer by room temperature exposure of the silicene-terminated ZrB<subscript>2</subscript> thin film surface to nitrogen radicals and then in the formation of an hBN monolayer replacing the silicon nitride layer through annealing at 900 °C. A large-scale moiré pattern and a clear dispersion of the π-electronic band provide evidence for the formation of an epitaxial hBN monolayer sheet directly on the diboride surface. The unique ability of the ZrB<subscript>2</subscript>(0001) surface, upon which both silicene and hBN monolayers can be formed, opens a way toward the integration of these two very different two-dimensional materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 126
- Issue :
- 13
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 139012168
- Full Text :
- https://doi.org/10.1063/1.5120295