Wavelength control of 1.3–1.6μm light emission from the quantum dots self-formed in GaAs/InAs short-period superlattices grown on InP (411)A substrates.

High lateral density quantum dot (QD) structures are self-formed by growing GaAs/InAs short-period superlattices (SLs) on InP (411)A substrates by gas source molecular beam epitaxy. Multilayer QD structures sandwiched with InP barrier layers showed a strong photoluminescence emission. The 1.3–1.6 μm wavelength emission was easily obtained and precisely controlled by regulating the SL period as well as the number of InAs monolayers (layer thickness). This wavelength control can be understood by considering the carrier confinement along the growth direction as well as the effective well depth change. [ABSTRACT FROM AUTHOR]