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An ovonic threshold switching selector based on Se-rich GeSe chalcogenide.
- Source :
- Applied Physics A: Materials Science & Processing; Nov2019, Vol. 125 Issue 11, pN.PAG-N.PAG, 1p, 1 Chart, 4 Graphs
- Publication Year :
- 2019
-
Abstract
- In this work, an ovonic threshold switching (OTS) selector with simply binary GeSe has been demonstrated. According to mean coordination number theory, Se-rich GeSe was chosen as the dielectric layer. Meanwhile, annealing process was attempted to reduce defect quantity and enhance atomic structure stability. The results showed improving selector performance such as low off current (< 0.1 nA at ~ 1 V), high on current (> 1 mA at ~ 2 V), extremely sharp switching slope (< 3 mv/dec), fast operating speed (turn-on time < 100 ns). In addition, the mechanism of trap-assisted Poole–Frenkel conduction has been deduced to explain the reasons for improvements induced by annealing. [ABSTRACT FROM AUTHOR]
- Subjects :
- NUMBER theory
ATOMIC structure
HYDROGEN evolution reactions
Subjects
Details
- Language :
- English
- ISSN :
- 09478396
- Volume :
- 125
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Applied Physics A: Materials Science & Processing
- Publication Type :
- Academic Journal
- Accession number :
- 139744745
- Full Text :
- https://doi.org/10.1007/s00339-019-3073-z