90 Gbit s 0.5 W decision circuit using InP InGaAs double heterojunction bipolar transistors.

A high-speed low-power decision circuit using InP/InGaAs double- heterojunction bipolar transistors (DIIBTs) has been successfully designed and fabricated. The DIIBTs exhibit a cutoff frequency fr and maximum oscillation frequency f_max of 232 and 360GHz, respectively, at a collector current density of 2.5 mA/μm². To boost the operating speed, a novel-master slave D-type flip-flop (MS-DFF) was used. Up to 90 Gbit/s operation was achieved with low power consumption of 0.5 W. These results demonstrate that InP-based DHBTs are attractive for making ultra-high-performance ICs for future optical communications systems operating at bit rates of 100 Gbit/s or more. [ABSTRACT FROM AUTHOR]