Back to Search
Start Over
Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell.
- Source :
- IEEE Electron Device Letters; Feb2020, Vol. 41 Issue 2, p240-243, 4p
- Publication Year :
- 2020
-
Abstract
- In this work, we present an experimental demonstration of a content addressable memory (CAM) cell based on ferroelectric HfO2 field effect transistors (FeFETs). Our proposed ferroelectric CAM (FeCAM) utilizes a CMOS-compatible ferroelectric material, hafnium zirconium oxide (HZO), as the gate dielectric. We discuss operation of the FeCAM cell and propose a suitable architecture to realize in-memory computation as well as single clock cycle content-driven search. In addition, the HZO FeFET is analyzed for its intrinsic memory characteristic, and design considerations are identified for improving device and therefore projected system-level performance. Our results indicate that FeCAM is well-suited to accommodate demanding modern computational needs by sealing the gaps between conventional memory, logic, and continued device scaling. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 41
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 141514725
- Full Text :
- https://doi.org/10.1109/LED.2019.2963300