High performance floating p-well carrier stored trench bipolar transistor with L-shaped shield gates.

A novel floating p-well carrier stored trench bipolar transistor with L-shaped shield gates (LSG-FP-CSTBT) is proposed in this Letter. The proposed device features combinatorial L-shaped shield gates with a thick oxide layer in the lower part of the trench. Numerical analysis results show that compared to the conventional FP-CSTBT, the shield effect provided by the LSGs not only improves the trade-off relationship between the on-state voltage drop (V _CEON) and turn-off loss (E_OFF), but also improves the trade-off relationship between the turn-on loss (E_ON) of the device and reverse recovery dV_AK/dt of the antiparallel freewheeling diode. Therefore, improved device performance and reduced electromagnetic interference noise are obtained. [ABSTRACT FROM AUTHOR]