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High performance floating p-well carrier stored trench bipolar transistor with L-shaped shield gates.
- Source :
- Electronics Letters (Wiley-Blackwell); 2/20/2020, Vol. 56 Issue 4, p205-207, 3p, 1 Diagram, 5 Graphs
- Publication Year :
- 2020
-
Abstract
- A novel floating p-well carrier stored trench bipolar transistor with L-shaped shield gates (LSG-FP-CSTBT) is proposed in this Letter. The proposed device features combinatorial L-shaped shield gates with a thick oxide layer in the lower part of the trench. Numerical analysis results show that compared to the conventional FP-CSTBT, the shield effect provided by the LSGs not only improves the trade-off relationship between the on-state voltage drop (V <subscript>CEON</subscript>) and turn-off loss (E<subscript>OFF</subscript>), but also improves the trade-off relationship between the turn-on loss (E<subscript>ON</subscript>) of the device and reverse recovery dV<subscript>AK</subscript>/dt of the antiparallel freewheeling diode. Therefore, improved device performance and reduced electromagnetic interference noise are obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 56
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 141747833
- Full Text :
- https://doi.org/10.1049/el.2019.3458