Back to Search
Start Over
Study of random dopant fluctuation in PNPN feedback FET.
- Source :
- Semiconductor Science & Technology; Mar2020, Vol. 35 Issue 3, p1-1, 1p
- Publication Year :
- 2020
-
Abstract
- The impact of random dopant fluctuation (RDF) on the performance variation of a PNPN feedback field effect transistor (PNPN FBFET) is investigated using a 3D technology computer aided design tool. To investigate RDF-induced device performance variation (e.g. threshold voltage (V<subscript>TH</subscript>) variation), the nominal doping profile of each region in a PNPN FBFET is separately randomized. Consequently, in terms of RDF-induced V<subscript>TH</subscript> variation, the channel-2 region (i.e. gated channel region) plays a key role as a main contributor to V<subscript>TH</subscript> variation, as it is the most decisive region for determining gate-to-channel controllability. As an example, the value of σV<subscript>TH</subscript> resulting from the channel-2 region is nine times higher than that from the channel-1 region. Based on the simulation results, guidelines for variation-immune device design are comprehensively discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 35
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 141912676
- Full Text :
- https://doi.org/10.1088/1361-6641/ab7146