Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors.

MLA

Kalinina, E. V., et al. “Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors.” Semiconductors, vol. 54, no. 2, Feb. 2020, pp. 246–52. EBSCOhost, https://doi.org/10.1134/S1063782620020128.

APA

Kalinina, E. V., Violina, G. N., Nikitina, I. P., Ivanova, E. V., Zabrodski, V. V., Shvarts, M. Z., Levina, S. A., & Nikolaev, A. V. (2020). Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors. Semiconductors, 54(2), 246–252. https://doi.org/10.1134/S1063782620020128

Chicago

Kalinina, E. V., G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodski, M. Z. Shvarts, S. A. Levina, and A. V. Nikolaev. 2020. “Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors.” Semiconductors 54 (2): 246–52. doi:10.1134/S1063782620020128.