Back to Search
Start Over
Surface Morphology Improvement of Non-Polar a-Plane GaN Using a Low-Temperature GaN Insertion Layer.
- Source :
- Chinese Physics Letters; Mar2020, Vol. 37 Issue 3, p1-1, 1p
- Publication Year :
- 2020
-
Abstract
- We demonstrate that a low-temperature GaN insertion layer could significantly improve the surface morphology of non-polar a-plane GaN.The two key factors in improving the surface morphology of non-polar a-plane GaN are growth temperature and growth time of the GaN insertion layer. The root-mean-square roughness of a-plane GaN is reduced by 75% compared to the sample without the GaN insertion layer. Meanwhile, the GaN insertion layer is also beneficial for improving crystal quality. This work provides a simple and effective method to improve the surface morphology of non-polar a-plane GaN. [ABSTRACT FROM AUTHOR]
- Subjects :
- SURFACE morphology
Subjects
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 37
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 142289895
- Full Text :
- https://doi.org/10.1088/0256-307X/37/3/038102