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E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs.
- Source :
- IEEE Electron Device Letters; Apr2020, Vol. 41 Issue 4, p545-548, 4p
- Publication Year :
- 2020
-
Abstract
- In this work, we demonstrate a GaN-based $\textit {p-n}$ junction gate (PNJ) HEMT featuring an ${n}$ -GaN/ ${p}$ -GaN/AlGaN/GaN gate stack. Compared to the more conventional ${p}$ -GaN gate HEMT with a Schottky junction between the gate metal and ${p}$ -GaN layer, the $\textit {p-n}$ junction can withstand higher reverse bias at the same peak electric-field as the depletion region extends to both the ${n}$ -side and ${p}$ -side, while exhibiting lower leakage current. The PNJ-HEMT shows a positive threshold voltage (${V}_{\text {TH}}$) of 1.78 V, a small gate leakage $(\sim 10^{-3}$ mA/mm @ ${V}_{\text {GS}} = {10}\,\, \text {V}$). In particular, a large forward gate breakdown voltage of 19.35 V at 25 °C and 19.70 V at 200 °C was achieved with the PNJ-gate HEMT. [ABSTRACT FROM AUTHOR]
- Subjects :
- MODULATION-doped field-effect transistors
BREAKDOWN voltage
THRESHOLD voltage
Subjects
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 41
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 142452353
- Full Text :
- https://doi.org/10.1109/LED.2020.2977143