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Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric.
- Source :
- IEEE Electron Device Letters; Apr2020, Vol. 41 Issue 4, p565-568, 4p
- Publication Year :
- 2020
-
Abstract
- This paper analyzes the effect of high current under illumination stress (HCIS) in self-aligned amorphous indium gallium zinc oxide transistors with Al2O3 as high- $\kappa $ gate dielectric. A negative parallel threshold voltage $({V}_{T}$) shift with the appearance of hysteresis $(\Delta {V}_{{hys}})$ is observed after HCIS. In contrast to the double ionized oxygen vacancy ($\text{V}_{\text O}^{\text 2+}$) theory, a peroxide donor theory based on ${ab~ initio}$ calculations is proposed to explain the degradation. Several methods are carried out to support the mechanism, including $\Delta {V}_{{hys}}$ generation, stress recovery behavior and capacitance-voltage ${(C-V)}$ measurements. A linear dependence between initial ${V}_{T}$ and negative ${V}_{T}$ shift is observed that further supports the peroxide theory. This work highlights the importance of evaluating the HCIS for oxide base semiconductor devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 41
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 142452355
- Full Text :
- https://doi.org/10.1109/LED.2020.2976616