Band Structure of Strained Ge1-xSnx Alloy: A Full-Zone 30-Band k ⋅ p Model.

We extend the previous 30-band k ⋅ p model effectively employed for relaxed Ge_1-xSn_x alloy to the case of strained Ge_1-xSn_x alloy. The strain-relevant parameters for the 30-band k ⋅ p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from literatures and optimizations. We specially investigate the dependence of band-gap at L-valley and Γ-valley with different Sn composition under uniaxial and biaxial strain along [100], [110] and [111] directions. The good agreement between our theoretical predictions and experimental data validates the effectiveness of our model. Our 30-band k ⋅ p model and relevant input parameters successfully applied to relaxed and strained Ge_1-xSn_x alloy offers a powerful tool for the optimization of sophisticated devices made from such alloy. [ABSTRACT FROM AUTHOR]