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High Absorption Contrast Quantum Confined Stark Effect in Ultra-Thin Ge/SiGe Quantum Well Stacks Grown on Si.

Authors :
Srinivasan, Srinivasan Ashwyn
Pantouvaki, Marianna
Porret, Clement
Vissers, Ewoud
Favia, Paola
De Coster, Jeroen
Bender, Hugo
Loo, Roger
Van Thourhout, Dries
Van Campenhout, Joris
Source :
IEEE Journal of Quantum Electronics; Feb2020, Vol. 56 Issue 1, p1-7, 7p
Publication Year :
2020

Abstract

We report on the performance of the quantum confined Stark effect (QCSE) in ultra-thin (~350 nm) Ge/SiGe quantum well stacks grown on Si. We demonstrate an absorption contrast $\Delta \alpha /\alpha $ of 2.1 at 1 Vpp swing in QCSE stacks grown on ultra-thin (100 nm) strain relaxed GeSi buffer layers on 300 mm Si wafers. Such ultra-thin QCSE stacks will enable future integration of highly efficient QCSE electro-absorption modulators with low optical coupling loss to passive Si waveguides in a sub-micron silicon photonics platform. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189197
Volume :
56
Issue :
1
Database :
Complementary Index
Journal :
IEEE Journal of Quantum Electronics
Publication Type :
Academic Journal
Accession number :
142488625
Full Text :
https://doi.org/10.1109/JQE.2019.2949640