Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell.

MLA

Takefumi Kamioka, et al. “Surface Inversion Layer Effective Minority Carrier Mobility as One of the Measures of Surface Quality of the P-ASi:H/i-ASi:H/CSi Heterojunction Solar Cell.” Japanese Journal of Applied Physics, vol. 59, no. SG, Apr. 2020, p. 1. EBSCOhost, https://doi.org/10.35848/1347-4065/ab70a0.

APA

Takefumi Kamioka, Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Kyotaro Nakamura, Motoo Morimura, Shimako Naitou, Noritaka Usami, Atsushi Ogura, & Yoshio Ohshita. (2020). Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell. Japanese Journal of Applied Physics, 59(SG), 1. https://doi.org/10.35848/1347-4065/ab70a0

Chicago

Takefumi Kamioka, Yutaka Hayashi, Kazuhiro Gotoh, Ryo Ozaki, Kyotaro Nakamura, Motoo Morimura, Shimako Naitou, Noritaka Usami, Atsushi Ogura, and Yoshio Ohshita. 2020. “Surface Inversion Layer Effective Minority Carrier Mobility as One of the Measures of Surface Quality of the P-ASi:H/i-ASi:H/CSi Heterojunction Solar Cell.” Japanese Journal of Applied Physics 59 (SG): 1. doi:10.35848/1347-4065/ab70a0.