The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress.

MLA

Kim, Hyojung, et al. “The Effects of Valence Band Offset on Threshold Voltage Shift in A-InGaZnO TFTs Under Negative Bias Illumination Stress.” IEEE Electron Device Letters, vol. 41, no. 5, May 2020, pp. 737–40. EBSCOhost, https://doi.org/10.1109/LED.2020.2981176.

APA

Kim, H., Im, K., Park, J., Khim, T., Hwang, H., Kim, S., Lee, S., Song, M., Choi, P., Song, J., & Choi, B. (2020). The Effects of Valence Band Offset on Threshold Voltage Shift in a-InGaZnO TFTs Under Negative Bias Illumination Stress. IEEE Electron Device Letters, 41(5), 737–740. https://doi.org/10.1109/LED.2020.2981176

Chicago

Kim, Hyojung, Kiju Im, Jongwoo Park, Taeyoung Khim, Hyuncheol Hwang, Soonkon Kim, Sangmin Lee, et al. 2020. “The Effects of Valence Band Offset on Threshold Voltage Shift in A-InGaZnO TFTs Under Negative Bias Illumination Stress.” IEEE Electron Device Letters 41 (5): 737–40. doi:10.1109/LED.2020.2981176.