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Role of point and line defects on the electronic structure of LaAlO3/SrTiO3 interfaces.
Role of point and line defects on the electronic structure of LaAlO3/SrTiO3 interfaces.
- Source :
- APL Materials; Apr2020, Vol. 8 Issue 4, p1-12, 12p
- Publication Year :
- 2020
-
Abstract
- Realization of heterostructures containing multiple two-dimensional electron liquids requires a fine control of the fabrication process. Here, we report a structural and spectroscopy study of LaAlO<subscript>3</subscript>/SrTiO<subscript>3</subscript>/LaAlO<subscript>3</subscript> trilayers grown on the SrTiO<subscript>3</subscript> substrate by pulsed-laser deposition. Scanning transmission electron microscopy with the help of ab initio calculations reveals that antisite defects associated with oxygen vacancies are primarily present in the SrTiO<subscript>3</subscript> film (STO-f) close to the p-type interface (STO-f/LaAlO<subscript>3</subscript>), while oxygen vacancies prevail close to the top n-type interface (LaAlO<subscript>3</subscript>/STO-f). At the same interface, misfit dislocations relax the tensile strain of the top LaAlO<subscript>3</subscript> layer. Combining x-ray absorption spectroscopy, x-ray linear dichroism, resonant photoemission spectroscopy, and electron energy loss spectroscopy, we observe that the 3d orbital reconstruction at the interface between LaAlO<subscript>3</subscript> and the SrTiO<subscript>3</subscript> substrate is confined over a few interfacial Ti planes while, at the top n-type interface (LaAlO<subscript>3</subscript>/STO-f), the absence of a dichroic signal can be related to the blurring of the interfacial orbital reconstruction due to the heterogeneity of defects. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2166532X
- Volume :
- 8
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- APL Materials
- Publication Type :
- Academic Journal
- Accession number :
- 143006930
- Full Text :
- https://doi.org/10.1063/1.5132376