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Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.
- Source :
- Nanotechnology; 7/31/2020, Vol. 31 Issue 31, p1-7, 7p
- Publication Year :
- 2020
-
Abstract
- GaSb quantum dots (QDs) have been grown by droplet epitaxy within InAlAs barrier layers on an InP (001) substrate. The droplet growth mode facilitates a larger size (average height ∼4.5 nm) and a lower density (∼6.3 × 10<superscript>9</superscript> cm<superscript>-2</superscript>) for the QDs than would be expected for the 4% lattice mismatch between GaSb and InAlAs. A type-II band alignment between the GaSb QDs and the InAlAs barriers is revealed by photoluminescence (PL) through a prominent blue-shift of ∼0.11 eV resulting from a six orders of magnitude increase in excitation power. Further confirmation of the type-II nature of these QDs is found through time-resolved PL studies showing a biexponential decay with a long carrier lifetime of ∼10.9 ns. These observations reveal new information for understanding the formation and properties of GaSb/InAlAs/InP QDs, which may be an optimum system for the development of both efficient memory cells and photovoltaic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 31
- Issue :
- 31
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 143366283
- Full Text :
- https://doi.org/10.1088/1361-6528/ab8a8e