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Investigation of β-Ga2O3 films and β-Ga2O3/GaN heterostructures grown by metal organic chemical vapor deposition.
- Source :
- SCIENCE CHINA Physics, Mechanics & Astronomy; Nov2020, Vol. 63 Issue 11, p1-5, 5p
- Publication Year :
- 2020
-
Abstract
- In this work, (-2 0 1) β-Ga<subscript>2</subscript>O<subscript>3</subscript> films are grown on GaN substrate by metal organic chemical vapor deposition (MOCVD). It is revealed that the β-Ga<subscript>2</subscript>O<subscript>3</subscript> film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga<subscript>2</subscript>O<subscript>3</subscript> film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga<subscript>2</subscript>O<subscript>3</subscript> film and the β-Ga<subscript>2</subscript>O<subscript>3</subscript>/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga<subscript>2</subscript>O<subscript>3</subscript> film. Moreover, the energy band structure of β-Ga<subscript>2</subscript>O<subscript>3</subscript>/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga<subscript>2</subscript>O<subscript>3</subscript> films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga<subscript>2</subscript>O<subscript>3</subscript>/GaN heterostructures in microelectronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16747348
- Volume :
- 63
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- SCIENCE CHINA Physics, Mechanics & Astronomy
- Publication Type :
- Academic Journal
- Accession number :
- 143759761
- Full Text :
- https://doi.org/10.1007/s11433-019-1546-3