Ferroelectric and Piezoelectric Properties of 0.24Pb(Zn1/3Nb2/3)O3⋅0.384PbZrO3⋅0.376PbTiO3 Thin Films Crystallized by Hot Isostatic Pressing.

Ferroelectric and piezoelectric properties of Pt/0.24Pb(Zn1/3Nb2/3)O3⋅0.384-PbZrO3⋅0.376PbTiO3 (PZNZT)/PbTiO3/Pt capacitors fabricated by crystallizing amorphous PZNZT films under high pressures of 1.0–176.5 MPa using hot isostatic pressing (HIP) are investigated. All of films HIP-treated under high pressure over 17.7 MPa hardly showed the fatigue degradation up to the switching cycles of 3× 1010. From piezomeasurements using piezoresponse scanning force microscopy, it was found that the sample HIP-treated under 1.8 MPa exhibited the highest saturated piezoelectric coefficient. [ABSTRACT FROM AUTHOR]