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From BiI3 to CuBiI4: a striking improvement in the photoelectric performance of a novel photodetector candidate.
- Source :
- Journal of Materials Chemistry C; 7/7/2020, Vol. 8 Issue 25, p8451-8456, 6p
- Publication Year :
- 2020
-
Abstract
- Bismuth halide based semiconductors have attracted increasing attention as the next generation photodetectors because of their excellent photoelectric performance, environmental friendliness, and high-element-abundance characteristics. However, it is still challenging to prepare a thin film under normal conditions because of the instability of BiI<subscript>3</subscript>. In this work, we use a room temperature elemental powder reaction in ambient conditions for the easy preparation of Cu incorporated perovskite-like CuBiI<subscript>4</subscript> on a large scale. The crystalline and photoelectric characteristics of the resulting CuBiI<subscript>4</subscript> thin films with different initial Cu content have been investigated by X-ray diffraction (XRD), UV-Vis spectroscopy, photoluminescence spectroscopy (PL), and transient surface photovoltage (TSPV) studies. The CuBiI<subscript>4</subscript> based photodetectors were first assembled, which showed a striking improvement in the responsivity of the photodetectors compared with pure binary BiI<subscript>3</subscript>. Particularly, the responsivity of the photodetector with a 1 : 1 molar ratio of copper to bismuth is 10<superscript>6</superscript> times larger than that with an initial molar ratio of 0 : 1 (pure BiI<subscript>3</subscript>). A possible mechanism for such an improvement was preliminarily discussed by taking advantage of the Hall effect measurements. Our work not only provides a universal synthetic strategy for preparing high quality Bi-based perovskite-like photoelectric materials but also presents a novel Bi-based photodetector material. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 8
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 144358414
- Full Text :
- https://doi.org/10.1039/d0tc01188f