Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)3 and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)3 modification.

Authors :: Li, Lianchuan
Zhang, Ziqi
Luo, Linshan
You, Run
Jiao, Jinlong
Huang, Wei
Wang, Jianyuan
Li, Cheng
Han, Xiang
Chen, Songyan
Source :: Ionics; Aug2020, Vol. 26 Issue 8, p3815-3821, 7p
Publication Year :: 2020
Abstract: Li<subscript>1.3</subscript>Al<subscript>0.3</subscript>Ti<subscript>1.7</subscript>(PO<subscript>4</subscript>)<subscript>3</subscript> (LATP) has become the focus of research because of its high ionic conductivity, high oxidation voltage, and low air sensitivity. However, Ti<superscript>4+</superscript> is easily reduced by Li metal. In this paper, amorphous Li<subscript>1.5</subscript>Al<subscript>0.5</subscript>Ge<subscript>1.5</subscript>(PO<subscript>4</subscript>)<subscript>3</subscript> (a-LAGP) is introduced as an interface modification layer, because LAGP has the small electrochemical potential difference and Ge<superscript>4+</superscript> is more difficult to be reduced by Li. Radio frequency sputtering (RF sputtering) is adopted to modify the a-LAGP thickness less than 100 nm. Compared with crystalline LAGP layer, a-LAGP has a better effect on improving the interface stability of LATP and Li. With the a-LAGP film, the Li/a-LAGP/LATP/a-LAGP/Li symmetrical cell is still stable after 100 cycles with the over potential changing from 1 V to 3 V. The probable mechanism of the good stability between a-LAGP and Li are discussed. [ABSTRACT FROM AUTHOR]

Full Text Access

Tools