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Enhancing the interface stability of Li1.3Al0.3Ti1.7(PO4)3 and lithium metal by amorphous Li1.5Al0.5Ge1.5(PO4)3 modification.
- Source :
- Ionics; Aug2020, Vol. 26 Issue 8, p3815-3821, 7p
- Publication Year :
- 2020
-
Abstract
- Li<subscript>1.3</subscript>Al<subscript>0.3</subscript>Ti<subscript>1.7</subscript>(PO<subscript>4</subscript>)<subscript>3</subscript> (LATP) has become the focus of research because of its high ionic conductivity, high oxidation voltage, and low air sensitivity. However, Ti<superscript>4+</superscript> is easily reduced by Li metal. In this paper, amorphous Li<subscript>1.5</subscript>Al<subscript>0.5</subscript>Ge<subscript>1.5</subscript>(PO<subscript>4</subscript>)<subscript>3</subscript> (a-LAGP) is introduced as an interface modification layer, because LAGP has the small electrochemical potential difference and Ge<superscript>4+</superscript> is more difficult to be reduced by Li. Radio frequency sputtering (RF sputtering) is adopted to modify the a-LAGP thickness less than 100 nm. Compared with crystalline LAGP layer, a-LAGP has a better effect on improving the interface stability of LATP and Li. With the a-LAGP film, the Li/a-LAGP/LATP/a-LAGP/Li symmetrical cell is still stable after 100 cycles with the over potential changing from 1 V to 3 V. The probable mechanism of the good stability between a-LAGP and Li are discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09477047
- Volume :
- 26
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- Ionics
- Publication Type :
- Academic Journal
- Accession number :
- 144520889
- Full Text :
- https://doi.org/10.1007/s11581-020-03503-x