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Crystal structure, electronic structure and thermoelectric properties of β- and γ-Zn4Sb3 thermoelectrics: a (3 + 1)-dimensional superspace group approach.
- Source :
- Journal of Materials Chemistry C; 7/21/2020, Vol. 8 Issue 27, p9205-9212, 8p
- Publication Year :
- 2020
-
Abstract
- Thermoelectric (TE) materials are promising candidates for solving today's energy problem owing to their ability to directly convert waste heat into electricity via the Seebeck effect. One of the most efficient TE materials known is Zn<subscript>4</subscript>Sb<subscript>3</subscript>. To understand its high efficiency, a novel composite crystal structure model for β- and γ-phases of Zn<subscript>4</subscript>Sb<subscript>3</subscript> is constructed using a (3 + 1)-dimensional ((3 + 1)-D) superspace group approach. This (3 + 1)-D model is expressed as [Zn<subscript>3+δ</subscript>Sb][Sb]<subscript>p</subscript> with the superspace group of R3¯m(00γ)0s. The [Zn<subscript>3+δ</subscript>Sb] and [Sb] subsystems have same a- and b-axis lengths but a different c-axis length. The (3 + 1)-D model contains four atomic sites: a Zn(1) normal site, an interstitial Zn (Zn<subscript>i</subscript>) site and an Sb(1) site in the [Zn<subscript>3+δ</subscript>Sb] subsystem and an Sb(2) site in the [Sb] subsystem, which is different from a conventional 3D model containing additional Zn<subscript>i</subscript> sites. The crystal structures of β- and γ-Zn<subscript>4</subscript>Sb<subscript>3</subscript> are investigated via powder and synchrotron X-ray diffraction (XRD) measurements. The XRD patterns are well analysed by the (3 + 1)-D model. The occupancies of Zn(1), Sb(1) and Sb(2) sites are 100%, whereas the Zn<subscript>i</subscript> occupancy changes depending on the heating time during the preparation of β-Zn<subscript>4</subscript>Sb<subscript>3</subscript>. Moreover, electronic density of states (DOS) of β-Zn<subscript>4</subscript>Sb<subscript>3</subscript> with and without Zn<subscript>i</subscript> is calculated based on the (3 + 1)-D model, demonstrating a close relationship between the DOS and the Zn<subscript>i</subscript> occupancy. The calculated TE properties, such as Seebeck coefficient, electrical conductivity and power factor, also depend on the Zn<subscript>i</subscript> occupancy. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 8
- Issue :
- 27
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 144618690
- Full Text :
- https://doi.org/10.1039/d0tc01497d