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Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers.
- Source :
- Journal of Applied Physics; 7/28/2020, Vol. 128 Issue 4, p1-6, 6p, 1 Diagram, 2 Charts, 1 Graph
- Publication Year :
- 2020
-
Abstract
- There has been steady effort to advance Ga-free InAs<subscript>1−x</subscript>Sb<subscript>x</subscript>/InAs<subscript>1−y</subscript>Sb<subscript>y</subscript> superlattice (SL) materials for long-wavelength infrared (LWIR) detector applications. Although Ga-free SLs grown pseudomorphically on GaSb wafers work well in mid-wavelength applications, most LWIR Ga-free SL designs suffer from relatively low optical absorption and poor hole transport. One of the main problems in using the Ga-free material system for LWIR applications is a tremendous constraint on band engineering imposed by matching the SL lattice parameter to the lattice constant of conventional GaSb substrates. In this work, we propose several lattice engineered short-period LWIR InAs<subscript>1−x</subscript>Sb<subscript>x</subscript>/InAs<subscript>1−y</subscript>Sb<subscript>y</subscript> SL designs that can enhance optical absorption and vertical hole mobility at an 11 μm cutoff wavelength. We also performed test growths of the designed structures on lattice-matched homogeneous buffer layers on GaAs wafers. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 128
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 144934575
- Full Text :
- https://doi.org/10.1063/5.0010468