A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures.

MLA

Xixi Jiang, et al. “A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures.” ACS Applied Nano Materials, vol. 2, no. 9, Sept. 2019, pp. 5674–80. EBSCOhost, https://doi.org/10.1021/acsanm.9b01193.

APA

Xixi Jiang, Xinyao Shi, Min Zhang, Yarong Wang, Zhenghao Gu, Lin Chen, Hao Zhu, Kai Zhang, Qingqing Sun, & Zhang, D. W. (2019). A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures. ACS Applied Nano Materials, 2(9), 5674–5680. https://doi.org/10.1021/acsanm.9b01193

Chicago

Xixi Jiang, Xinyao Shi, Min Zhang, Yarong Wang, Zhenghao Gu, Lin Chen, Hao Zhu, Kai Zhang, Qingqing Sun, and David Wei Zhang. 2019. “A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures.” ACS Applied Nano Materials 2 (9): 5674–80. doi:10.1021/acsanm.9b01193.