Microscopic origins of performance losses in highly efficient Cu(In,Ga)Se2 thin-film solar cells.

Thin-film solar cells based on polycrystalline absorbers have reached very high conversion efficiencies of up to 23-25%. In order to elucidate the limiting factors that need to be overcome for even higher efficiency levels, it is essential to investigate microscopic origins of loss mechanisms in these devices. In the present work, a high efficiency (21% without anti-reflection coating) copper indium gallium diselenide (CIGSe) solar cell is characterized by means of a correlative microscopy approach and corroborated by means of photoluminescence spectroscopy. The values obtained by the experimental characterization are used as input parameters for two-dimensional device simulations, for which a real microstructure was used. It can be shown that electrostatic potential and lifetime fluctuations exhibit no substantial impact on the device performance. In contrast, nonradiative recombination at random grain boundaries can be identified as a significant loss mechanism for CIGSe solar cells, even for devices at a very high performance level. Achieving higher efficiencies for thin-film solar cells always requires identification of the limiting factors. Here Krause et al. show that inhomogeneously distributed net doping or lifetime have little impact while recombination at grain boundaries is one of the main loss mechanisms for high performance Cu(In,Ga)Se₂ solar cells. [ABSTRACT FROM AUTHOR]